RN2106MFV,L3F(CT

RN2106MFV,L3F(CT

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Manufacturer Part RN2106MFV,L3F(CT
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS PREBIAS PNP 50V 0.1A VESM
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single, Pre-Biased
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union

Availability

InStock 7,033
UnitPrice $ 0.18000

RN2106MFV,L3F(CT Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RN2106MFV,L3F(CT Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:PNP - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce:80 @ 10mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):500nA
Frequency - Transition:250 MHz
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM

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Shipping Rate

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