RN1110MFV,L3F

RN1110MFV,L3F

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Manufacturer Part RN1110MFV,L3F
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS PREBIAS NPN 50V 0.1A VESM
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Single, Pre-Biased
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet RN1110MFV,L3F PDF

Availability

InStock 6,328
UnitPrice $ 0.02926

RN1110MFV,L3F Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RN1110MFV,L3F Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:NPN - Pre-Biased
Current - Collector (Ic) (Max):100 mA
Voltage - Collector Emitter Breakdown (Max):50 V
Resistor - Base (R1):4.7 kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 500µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:-
Power - Max:150 mW
Mounting Type:Surface Mount
Package / Case:SOT-723
Supplier Device Package:VESM

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Shipping Rate

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Shipping Methods

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