SQV120N06-4M7L_GE3

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Manufacturer Part	SQV120N06-4M7L_GE3
Manufacturer	Vishay / Siliconix
Description	MOSFET N-CH 60V 120A TO262-3
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	SQV120N06-4M7L_GE3 PDF

Availability

InStock	373,314
UnitPrice	$ 1.86252

SQV120N06-4M7L_GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SQV120N06-4M7L_GE3 Specifications

Type	Description
Series:	Automotive, AEC-Q101, TrenchFET®
Package:	Tape & Reel (TR)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	4.5V, 10V
Rds On (Max) @ Id, Vgs:	4.7mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	230 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	8800 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	TO-262-3
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

Shopping Guide

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