SIHH28N60E-T1-GE3

SIHH28N60E-T1-GE3

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Manufacturer Part SIHH28N60E-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET N-CH 600V 29A PPAK 8 X 8
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet SIHH28N60E-T1-GE3 PDF

Availability

InStock 233,595
UnitPrice $ 3.44100

SIHH28N60E-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SIHH28N60E-T1-GE3 Specifications

Type Description
Series:E
Package:Bulk
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):600 V
Current - Continuous Drain (Id) @ 25°C:29A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:98mOhm @ 14A, 10V
Vgs(th) (Max) @ Id:5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:129 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2614 pF @ 100 V
FET Feature:-
Power Dissipation (Max):202W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 8 x 8
Package / Case:8-PowerTDFN

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