IPB038N12N3GATMA1

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Manufacturer Part	IPB038N12N3GATMA1
Manufacturer	IR (Infineon Technologies)
Description	MOSFET N-CH 120V 120A D2PAK
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPB038N12N3GATMA1 PDF

Availability

InStock	2
UnitPrice	$ 6.17000

IPB038N12N3GATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPB038N12N3GATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	120 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	3.8mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 270µA
Gate Charge (Qg) (Max) @ Vgs:	211 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	13800 pF @ 60 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	D²PAK (TO-263AB)
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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