SI7111EDN-T1-GE3

SI7111EDN-T1-GE3

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Manufacturer Part SI7111EDN-T1-GE3
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 30V 60A PPAK1212-8
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet SI7111EDN-T1-GE3 PDF

Availability

InStock 3,868
UnitPrice $ 0.66000

SI7111EDN-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SI7111EDN-T1-GE3 Specifications

Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):30 V
Current - Continuous Drain (Id) @ 25°C:60A (Tc)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:8.55mOhm @ 15A, 4.5V
Vgs(th) (Max) @ Id:1.6V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 2.5 V
Vgs (Max):±12V
Input Capacitance (Ciss) (Max) @ Vds:5860 pF @ 15 V
FET Feature:-
Power Dissipation (Max):52W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PowerPAK® 1212-8
Package / Case:PowerPAK® 1212-8

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