TJ80S04M3L(T6L1,NQ

TJ80S04M3L(T6L1,NQ

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Manufacturer Part TJ80S04M3L(T6L1,NQ
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET P-CH 40V 80A DPAK
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet TJ80S04M3L(T6L1,NQ PDF

Availability

InStock 267,429
UnitPrice $ 0.97500

TJ80S04M3L(T6L1,NQ Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TJ80S04M3L(T6L1,NQ Specifications

Type Description
Series:U-MOSVI
Package:Tape & Reel (TR)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):40 V
Current - Continuous Drain (Id) @ 25°C:80A (Ta)
Drive Voltage (Max Rds On, Min Rds On):6V, 10V
Rds On (Max) @ Id, Vgs:5.2mOhm @ 40A, 10V
Vgs(th) (Max) @ Id:3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:158 nC @ 10 V
Vgs (Max):+10V, -20V
Input Capacitance (Ciss) (Max) @ Vds:7770 pF @ 10 V
FET Feature:-
Power Dissipation (Max):100W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:DPAK+
Package / Case:TO-252-3, DPak (2 Leads + Tab), SC-63

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Shipping Rate

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Shipping Methods

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