SI8481DB-T1-E1

SI8481DB-T1-E1

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Manufacturer Part SI8481DB-T1-E1
Manufacturer Vishay / Siliconix
Description MOSFET P-CH 20V 9.7A 4MICRO FOOT
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet SI8481DB-T1-E1 PDF

Availability

InStock 8
UnitPrice $ 0.51000

SI8481DB-T1-E1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SI8481DB-T1-E1 Specifications

Type Description
Series:TrenchFET® Gen III
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:9.7A (Tc)
Drive Voltage (Max Rds On, Min Rds On):1.8V, 4.5V
Rds On (Max) @ Id, Vgs:21mOhm @ 3A, 4.5V
Vgs(th) (Max) @ Id:900mV @ 250µA
Gate Charge (Qg) (Max) @ Vgs:47 nC @ 4.5 V
Vgs (Max):±8V
Input Capacitance (Ciss) (Max) @ Vds:2500 pF @ 10 V
FET Feature:-
Power Dissipation (Max):2.8W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:4-MICRO FOOT® (1.6x1.6)
Package / Case:4-UFBGA

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