CSD25211W1015

CSD25211W1015

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Manufacturer Part CSD25211W1015
Manufacturer Texas Instruments
Description MOSFET P-CH 20V 3.2A 6DSBGA
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union

Availability

InStock 1,265
UnitPrice $ 0.66000

CSD25211W1015 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

CSD25211W1015 Specifications

Type Description
Series:NexFET™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:P-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):20 V
Current - Continuous Drain (Id) @ 25°C:3.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):2.5V, 4.5V
Rds On (Max) @ Id, Vgs:33mOhm @ 1.5A, 4.5V
Vgs(th) (Max) @ Id:1.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:4.1 nC @ 4.5 V
Vgs (Max):-6V
Input Capacitance (Ciss) (Max) @ Vds:570 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1W (Ta)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:6-DSBGA (1x1.5)
Package / Case:6-UFBGA, DSBGA

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Shipping Rate

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Shipping Methods

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