TK10J80E,S1E

TK10J80E,S1E

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Manufacturer Part TK10J80E,S1E
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description MOSFET N-CH 800V 10A TO3P
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet TK10J80E,S1E PDF

Availability

InStock 469,600
UnitPrice $ 2.73480

TK10J80E,S1E Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

TK10J80E,S1E Specifications

Type Description
Series:π-MOSVIII
Package:Tube
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):800 V
Current - Continuous Drain (Id) @ 25°C:10A (Ta)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:1Ohm @ 5A, 10V
Vgs(th) (Max) @ Id:4V @ 1mA
Gate Charge (Qg) (Max) @ Vgs:46 nC @ 10 V
Vgs (Max):±30V
Input Capacitance (Ciss) (Max) @ Vds:2000 pF @ 25 V
FET Feature:-
Power Dissipation (Max):250W (Tc)
Operating Temperature:150°C (TJ)
Mounting Type:Through Hole
Supplier Device Package:TO-3P(N)
Package / Case:TO-3P-3, SC-65-3

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Shipping Rate

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