BSB028N06NN3GXUMA1

BSB028N06NN3GXUMA1

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Manufacturer Part BSB028N06NN3GXUMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 60V 22A/90A 2WDSON
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet BSB028N06NN3GXUMA1 PDF

Availability

InStock 187,905
UnitPrice $ 2.54000

BSB028N06NN3GXUMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSB028N06NN3GXUMA1 Specifications

Type Description
Series:OptiMOS™
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):60 V
Current - Continuous Drain (Id) @ 25°C:22A (Ta), 90A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:2.8mOhm @ 30A, 10V
Vgs(th) (Max) @ Id:4V @ 102µA
Gate Charge (Qg) (Max) @ Vgs:143 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:12000 pF @ 30 V
FET Feature:-
Power Dissipation (Max):2.2W (Ta), 78W (Tc)
Operating Temperature:-40°C ~ 150°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:MG-WDSON-2, CanPAK M™
Package / Case:3-WDSON

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