IPB80N06S2H5ATMA1

Image is for reference, please contact us to get the real picture

Manufacturer Part	IPB80N06S2H5ATMA1
Manufacturer	Rochester Electronics
Description	MOSFET N-CH 55V 80A TO263-3-2
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPB80N06S2H5ATMA1 PDF

Availability

InStock	12,518
UnitPrice	$ 1.08000

IPB80N06S2H5ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPB80N06S2H5ATMA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Bulk
Part Status:	Active
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	55 V
Current - Continuous Drain (Id) @ 25°C:	80A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	5.2mOhm @ 80A, 10V
Vgs(th) (Max) @ Id:	4V @ 230µA
Gate Charge (Qg) (Max) @ Vgs:	155 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	4.4 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	300W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PG-TO263-3-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.