BSM180C12P2E202

BSM180C12P2E202

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Manufacturer Part BSM180C12P2E202
Manufacturer ROHM Semiconductor
Description SICFET N-CH 1200V 204A MODULE
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union

Availability

InStock 4
UnitPrice $ 600.00000

BSM180C12P2E202 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

BSM180C12P2E202 Specifications

Type Description
Series:-
Package:Tray
Part Status:Active
FET Type:N-Channel
Technology:SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):1200 V
Current - Continuous Drain (Id) @ 25°C:204A (Tc)
Drive Voltage (Max Rds On, Min Rds On):-
Rds On (Max) @ Id, Vgs:-
Vgs(th) (Max) @ Id:4V @ 35.2mA
Gate Charge (Qg) (Max) @ Vgs:-
Vgs (Max):+22V, -6V
Input Capacitance (Ciss) (Max) @ Vds:20000 pF @ 10 V
FET Feature:-
Power Dissipation (Max):1360W (Tc)
Operating Temperature:175°C (TJ)
Mounting Type:Chassis Mount
Supplier Device Package:Module
Package / Case:Module

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Shipping Rate

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