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| Manufacturer Part | TPH2010FNH,L1Q |
|---|---|
| Manufacturer | Toshiba Electronic Devices and Storage Corporation |
| Description | MOSFET N-CH 250V 5.6A 8SOP |
| Category | Discrete Semiconductor Products |
| Family | Transistors - FETs, MOSFETs - Single |
| Lifecycle: | New from this manufacturer. |
| Delivery: | DHL FedEx Ups TNT EMS |
| Payment | T/T Paypal Visa MoneyGram Western Union |
| DataSheet | TPH2010FNH,L1Q PDF |
| InStock | 3,929 |
|---|---|
| UnitPrice | $ 1.54000 |
TPH2010FNH,L1Q Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com
| Type | Description |
|---|---|
| Series: | U-MOSVIII-H |
| Package: | Tape & Reel (TR)Cut Tape (CT) |
| Part Status: | Active |
| FET Type: | N-Channel |
| Technology: | MOSFET (Metal Oxide) |
| Drain to Source Voltage (Vdss): | 250 V |
| Current - Continuous Drain (Id) @ 25°C: | 5.6A (Ta) |
| Drive Voltage (Max Rds On, Min Rds On): | 10V |
| Rds On (Max) @ Id, Vgs: | 198mOhm @ 2.8A, 10V |
| Vgs(th) (Max) @ Id: | 4V @ 200µA |
| Gate Charge (Qg) (Max) @ Vgs: | 7 nC @ 10 V |
| Vgs (Max): | ±20V |
| Input Capacitance (Ciss) (Max) @ Vds: | 600 pF @ 100 V |
| FET Feature: | - |
| Power Dissipation (Max): | 1.6W (Ta), 42W (Tc) |
| Operating Temperature: | 150°C (TJ) |
| Mounting Type: | Surface Mount |
| Supplier Device Package: | 8-SOP Advance (5x5) |
| Package / Case: | 8-PowerVDFN |
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