SCT10N120H

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Manufacturer Part	SCT10N120H
Manufacturer	STMicroelectronics
Description	SICFET N-CH 1200V 12A H2PAK-2
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union

Availability

InStock	471,105
UnitPrice	$ 7.69000

SCT10N120H Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SCT10N120H Specifications

Type	Description
Series:	-
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Active
FET Type:	N-Channel
Technology:	SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss):	1200 V
Current - Continuous Drain (Id) @ 25°C:	12A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	20V
Rds On (Max) @ Id, Vgs:	690mOhm @ 6A, 20V
Vgs(th) (Max) @ Id:	3.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	22 nC @ 20 V
Vgs (Max):	+25V, -10V
Input Capacitance (Ciss) (Max) @ Vds:	290 pF @ 400 V
FET Feature:	-
Power Dissipation (Max):	150W (Tc)
Operating Temperature:	-55°C ~ 200°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	H2Pak-2
Package / Case:	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.