RN2712JE(TE85L,F)

RN2712JE(TE85L,F)

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Manufacturer Part RN2712JE(TE85L,F)
Manufacturer Toshiba Electronic Devices and Storage Corporation
Description TRANS 2PNP PREBIAS 0.1W ESV
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - Arrays, Pre-Biased
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet RN2712JE(TE85L,F) PDF

Availability

InStock 4,000
UnitPrice $ 0.48000

RN2712JE(TE85L,F) Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

RN2712JE(TE85L,F) Specifications

Type Description
Series:-
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
Transistor Type:2 PNP - Pre-Biased (Dual) (Emitter Coupled)
Current - Collector (Ic) (Max):100mA
Voltage - Collector Emitter Breakdown (Max):50V
Resistor - Base (R1):22kOhms
Resistor - Emitter Base (R2):-
DC Current Gain (hFE) (Min) @ Ic, Vce:120 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic:300mV @ 250µA, 5mA
Current - Collector Cutoff (Max):100nA (ICBO)
Frequency - Transition:200MHz
Power - Max:100mW
Mounting Type:Surface Mount
Package / Case:SOT-553
Supplier Device Package:ESV

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