SPB10N10L G

SPB10N10L G

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Manufacturer Part SPB10N10L G
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 100V 10.3A TO263-3
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet SPB10N10L G PDF

Availability

InStock 513,786
UnitPrice $ 0.00000

SPB10N10L G Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SPB10N10L G Specifications

Type Description
Series:SIPMOS®
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Discontinued at Digi-Key
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):100 V
Current - Continuous Drain (Id) @ 25°C:10.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On):10V
Rds On (Max) @ Id, Vgs:154mOhm @ 8.1A, 10V
Vgs(th) (Max) @ Id:2V @ 21µA
Gate Charge (Qg) (Max) @ Vgs:22 nC @ 10 V
Vgs (Max):±20V
Input Capacitance (Ciss) (Max) @ Vds:444 pF @ 25 V
FET Feature:-
Power Dissipation (Max):50W (Tc)
Operating Temperature:-55°C ~ 175°C (TJ)
Mounting Type:Surface Mount
Supplier Device Package:PG-TO263-3-2
Package / Case:TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

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Shipping Rate

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