IPI120N06S4H1AKSA1

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Manufacturer Part	IPI120N06S4H1AKSA1
Manufacturer	IR (Infineon Technologies)
Description	MOSFET N-CH 60V 120A TO262-3
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	IPI120N06S4H1AKSA1 PDF

Availability

InStock	462,439
UnitPrice	$ 0.00000

IPI120N06S4H1AKSA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IPI120N06S4H1AKSA1 Specifications

Type	Description
Series:	OptiMOS™
Package:	Tube
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	60 V
Current - Continuous Drain (Id) @ 25°C:	120A (Tc)
Drive Voltage (Max Rds On, Min Rds On):	10V
Rds On (Max) @ Id, Vgs:	2.4mOhm @ 100A, 10V
Vgs(th) (Max) @ Id:	4V @ 200µA
Gate Charge (Qg) (Max) @ Vgs:	270 nC @ 10 V
Vgs (Max):	±20V
Input Capacitance (Ciss) (Max) @ Vds:	21900 pF @ 25 V
FET Feature:	-
Power Dissipation (Max):	250W (Tc)
Operating Temperature:	-55°C ~ 175°C (TJ)
Mounting Type:	Through Hole
Supplier Device Package:	PG-TO262-3-1
Package / Case:	TO-262-3 Long Leads, I²Pak, TO-262AA

Shopping Guide

Shipping Rate

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