SIA850DJ-T1-GE3

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Manufacturer Part	SIA850DJ-T1-GE3
Manufacturer	Vishay / Siliconix
Description	MOSFET N-CH 190V 950MA PPAK
Category	Discrete Semiconductor Products
Family	Transistors - FETs, MOSFETs - Single
Lifecycle:	New from this manufacturer.
Delivery:	DHL FedEx Ups TNT EMS
Payment	T/T Paypal Visa MoneyGram Western Union
DataSheet	SIA850DJ-T1-GE3 PDF

Availability

InStock	924,930
UnitPrice	$ 0.00000

SIA850DJ-T1-GE3 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

SIA850DJ-T1-GE3 Specifications

Type	Description
Series:	LITTLE FOOT®
Package:	Tape & Reel (TR)Cut Tape (CT)
Part Status:	Obsolete
FET Type:	N-Channel
Technology:	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):	190 V
Current - Continuous Drain (Id) @ 25°C:	950mA (Tc)
Drive Voltage (Max Rds On, Min Rds On):	1.8V, 4.5V
Rds On (Max) @ Id, Vgs:	3.8Ohm @ 360mA, 4.5V
Vgs(th) (Max) @ Id:	1.4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:	4.5 nC @ 10 V
Vgs (Max):	±16V
Input Capacitance (Ciss) (Max) @ Vds:	90 pF @ 100 V
FET Feature:	Schottky Diode (Isolated)
Power Dissipation (Max):	1.9W (Ta), 7W (Tc)
Operating Temperature:	-55°C ~ 150°C (TJ)
Mounting Type:	Surface Mount
Supplier Device Package:	PowerPAK® SC-70-6 Dual
Package / Case:	PowerPAK® SC-70-6 Dual

Shopping Guide

Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.