HSG1002VE-TL-E

HSG1002VE-TL-E

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Manufacturer Part HSG1002VE-TL-E
Manufacturer Rochester Electronics
Description RF 0.035A C BAND GERMANIUM NPN
Category Discrete Semiconductor Products
Family Transistors - Bipolar (BJT) - RF
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet HSG1002VE-TL-E PDF

Availability

InStock 519,687
UnitPrice $ 0.30000

HSG1002VE-TL-E Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

HSG1002VE-TL-E Specifications

Type Description
Series:-
Package:Bulk
Part Status:Active
Transistor Type:NPN
Voltage - Collector Emitter Breakdown (Max):3.5V
Frequency - Transition:38GHz
Noise Figure (dB Typ @ f):0.7dB ~ 1.8dB @ 1.8GHz ~ 5.8GHz
Gain:8dB ~ 19.5dB
Power - Max:200mW
DC Current Gain (hFE) (Min) @ Ic, Vce:100 @ 5mA, 2V
Current - Collector (Ic) (Max):35mA
Operating Temperature:-
Mounting Type:Surface Mount
Package / Case:4-SMD, Gull Wing
Supplier Device Package:4-MFPAK

Shopping Guide

Shipping Rate
Shipping Rate

We ship orders once a day around 5 p.m., except Sundays. Once shipped, the estimated delivery time depends on the courier company you choose, usually 5-7 working days.

Shipping Methods
Shipping Methods

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