IQE006NE2LM5ATMA1

IQE006NE2LM5ATMA1

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Manufacturer Part IQE006NE2LM5ATMA1
Manufacturer IR (Infineon Technologies)
Description MOSFET N-CH 25V 41A/298A 8TSON
Category Discrete Semiconductor Products
Family Transistors - FETs, MOSFETs - Single
Lifecycle: New from this manufacturer.
Delivery: DHL FedEx Ups TNT EMS
Payment T/T Paypal Visa MoneyGram Western Union
DataSheet IQE006NE2LM5ATMA1 PDF

Availability

InStock 4,218
UnitPrice $ 2.64000

IQE006NE2LM5ATMA1 Current price of is for reference only, if you want to get best price, please submit a inquiry or direct email to our sales team rfq@www.zhschip.com

IQE006NE2LM5ATMA1 Specifications

Type Description
Series:*
Package:Tape & Reel (TR)Cut Tape (CT)
Part Status:Active
FET Type:N-Channel
Technology:MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):25 V
Current - Continuous Drain (Id) @ 25°C:41A (Ta), 298A (Tc)
Drive Voltage (Max Rds On, Min Rds On):4.5V, 10V
Rds On (Max) @ Id, Vgs:650mOhm @ 20A, 10V
Vgs(th) (Max) @ Id:2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:82.1 nC @ 10 V
Vgs (Max):±16V
Input Capacitance (Ciss) (Max) @ Vds:5453 pF @ 12 V
FET Feature:-
Power Dissipation (Max):2.1W (Ta), 89W (Tc)
Operating Temperature:-55°C ~ 150°C (TJ)
Mounting Type:Surface Mount, Wettable Flank
Supplier Device Package:PG-TSON-8-4
Package / Case:8-PowerTDFN

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Shipping Rate

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